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VTB Process Photodiodes
VTB1012, 1013
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a "flat" window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22)
VTB1012
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = O, V = 10 mV H = 0, V = 0 365 nm 320 920 40 35 3.0 x 10-14 (Typ.) 4.2 x 10
12 (Typ.)
VTB1013
UNITS Max. .23 Min. 8 Typ. 13 .12 490 -2.0 100 20 7.0 -8.0 .31 .09 1100 320 920 2 40 35 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 1100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees W Hz cm Hz / W
Typ. 13 .12 490 -2.0 .25 -8.0 .31 .09
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PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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